SI2304BDS-T1-GE3-HXY,HXY MOSFET
SI2304BDS-T1-GE3-HXY BY HXY MOSFET IS A P-CHANNEL MOSFET WITH -2.8A DRAIN CURRENT -20V DRAIN-SOURCE VOLTAGE LOW RDS(ON) OF 0.055Ω AT VGS -4.5V SOT-23 PACKAGE SUITABLE FOR LOAD SWITCHING AND POWER MANAGEMENT APPLICATIONS.
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