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CEL NE3210S01-T1B

RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR 1-ELEMENT KU BAND GALLIUM ARSENIDE N-CHANNEL HETERO-JUNCTION FET

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Technical

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related specs
Lead Free
Lead Free
Mount
Surface Mount
Case/Package
SMD/SMT
Packaging
Tape and Reel
Power Dissipation
0.165 W
Gate to Source Voltage (Vgs)
-3 V
Drain to Source Voltage (Vdss)
4 V

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