IXYS IXFH26N60P

IXFH26N60P BY IXYS SEMICONDUCTOR IS A N-CHANNEL POWER MOSFET WITH A 600V DRAIN-TO-SOURCE VOLTAGE 26A CONTINUOUS DRAIN CURRENT RDS(ON) OF 0.18 AT VGS=10V AND A MAXIMUM GATE CHARGE OF 120NC SUITABLE FOR HIGH-VOLTAGE SWITCHING APPLICATIONS.