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NEXPERIA BUK9Y25-60E

POWER FIELD-EFFECT TRANSISTOR 34A I(D) 1-ELEMENT N-CHANNEL METAL-OXIDE SEMICONDUCTOR FET

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related specs
RoHS
Compliant
Number of Channels
1
Power Dissipation
65 W
Gate to Source Voltage (Vgs)
10 V
Continuous Drain Current (ID)
34 A
Drain to Source Voltage (Vdss)
60 V

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