Skip to main content

NEXPERIA PSMN011-80YS115

POWER FIELD-EFFECT TRANSISTOR 67A I(D) 1-ELEMENT N-CHANNEL METAL-OXIDE SEMICONDUCTOR FET

Product Details

Find similar products  

Technical

Select to search
related specs
RoHS
Compliant
Lead Free
Lead Free
Packaging
Tape & Reel
Case/Package
SOT
Lifecycle Status
Production (Last Updated: 3 months ago)
Element Configuration
Single
Number of Pins
4
Continuous Drain Current (ID)
67 A
Drain to Source Voltage (Vdss)
80 V
Rds On Max
0.011 Ω
Power Dissipation
117 W
Input Capacitance
0 F
Gate to Source Voltage (Vgs)
20 V

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us