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NXP SEMICONDUCTORS BF998R235

POWER FIELD-EFFECT TRANSISTOR 0.03A I(D) 1-ELEMENT N-CHANNEL METAL-OXIDE SEMICONDUCTOR FET

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Technical

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related specs
RoHS
Compliant
Mount
Surface Mount
Contact Plating
Tin
Packaging
Tape and Reel
Element Configuration
Dual
Number of Pins
4
Number of Elements
1
Gate to Source Voltage (Vgs)
1.5 V
Continuous Drain Current (ID)
0.03 A
Drain to Source Voltage (Vdss)
20 V

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