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ONSEMI ATP113-TL-H

POWER FIELD-EFFECT TRANSISTOR 35A I(D) 1-ELEMENT P-CHANNEL METAL-OXIDE SEMICONDUCTOR FET

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Lead Free

Packaging

Tape and Reel

Lifecycle Status

Production (Last Updated: 3 years ago)

Rds On Max

0.0295 Ω

Input Capacitance

0 F

Gate to Source Voltage (Vgs)

20 V

Continuous Drain Current (ID)

35 A

Drain to Source Voltage (Vdss)

60 V

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