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ONSEMI KSC3503DSTU

BIPOLAR TRANSISTORS - BJT NPN SI TRANSISTOR EPITAXIAL

Product Details

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Technical

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related specs
RoHS
Compliant
Lead Free
Lead Free
Mount
Through Hole
Polarity
NPN
Case/Package
TO-126
Lifecycle Status
Production (Last Updated: 3 years ago)
Element Configuration
Single
Contact Plating
Tin
hFE Min
60
Number of Pins
3
Number of Elements
1
Power Dissipation
7 W
Transition Frequency
150000000 Hz
Max Collector Current
0.1 A
Collector Emitter Breakdown Voltage
300 V
Collector Emitter Saturation Voltage
0.6 V

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