Skip to main content
Toll-Free: +91 80-6793-5600
My Account
BOM Request a Quote
Home Products Discrete Semiconductors Transistors MOSFETs NVBG020N120SC1

ONSEMI NVBG020N120SC1

NVBG020N120SC1 by ONSEMI is a silicon carbide (SiC) N-channel MOSFET with 20 mOhm Rds(on), 1200V Vdss, 8.6A Id, and 468W power dissipation, in a D2PAK-7L package, ideal for high-efficiency applications.
Datasheet

Product Details

Find similar products  

Technical

Select to search
related specs
Lifecycle Status
Production (Last Updated: 3 years ago)
Power Dissipation
468 W
Continuous Drain Current (ID)
8.6 A
Drain to Source Voltage (Vdss)
1200 V
Datasheet
Compare Parts

Purchase

Availability
800
Ships in 16 Days
800
Lead Time (weeks)
18
Unit Price
$50.784525
Total Price
$40,627.62
Minimum: 800
Multiples: 800
Quantity must be in multiples of 800
Request a Quote

Need Assistance?

Contact Us