RENESAS RD12MVP1
RD12MVP1,RENESAS,RF POWER FIELD-EFFECT TRANSISTOR 1-ELEMENT VERY HIGH FREQUENCY BAND SILICON N-CHANNEL METAL-OXIDE SEMICONDUCTOR...
RD12MVP1 BY RENESAS IS AN RF POWER FIELD-EFFECT TRANSISTOR FEATURING A SINGLE N-CHANNEL MOS STRUCTURE DESIGNED FOR VERY HIGH FREQUENCY BAND APPLICATIONS OFFERING HIGH EFFICIENCY AND RELIABILITY IN RF AMPLIFICATION.