SI2306BDS-T1-E3,SILICONIX
SI2306BDS-T1-E3 BY SILICONIX (VISHAY) IS A P-CHANNEL MOSFET WITH A MAXIMUM DRAIN-SOURCE VOLTAGE OF 30V CONTINUOUS DRAIN CURRENT OF 4.2A RDS(ON) OF 0.055 AT VGS=10V AND A COMPACT SOT-23 PACKAGE SUITABLE FOR HIGH-SPEED SWITCHING APPLICATIONS.
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