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TOSHIBA 2SK3878(F)

POWER FIELD-EFFECT TRANSISTOR 9A I(D) 1-ELEMENT N-CHANNEL METAL-OXIDE SEMICONDUCTOR FET

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Technical

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related specs
RoHS
Compliant
Lead Free
Lead Free
Mount
Through Hole
Contact Plating
Copper, Silver, Tin
Element Configuration
Single
Number of Pins
3
Number of Elements
1
Power Dissipation
150 W
Gate to Source Voltage (Vgs)
30 V
Continuous Drain Current (ID)
9 A
Drain to Source Voltage (Vdss)
900 V
Rds On Max
1.3 Ω
Input Capacitance
0 F
Threshold Voltage
4 V

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