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VISHAY SILICONIX SISS61DN-T1-GE3

SISS61DN-T1-GE3 by SILICONIX (VISHAY) is a N-channel MOSFET with 60V drain-source voltage, 20A continuous drain current, 4.5V gate threshold, and low on-resistance, ideal for power management applications.

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18,000

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$0.911625

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$2,734.875

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VISHAY SILICONIX SISS61DN-T1-GE3

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