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VISHAY SIHB18N60E-GE3

SIHB18N60E-GE3 BY VISHAY IS A HIGH-VOLTAGE N-CHANNEL MOSFET WITH A DRAIN-SOURCE VOLTAGE OF 600V CONTINUOUS DRAIN CURRENT OF 18A RDS(ON) OF 0.18 AND A MAXIMUM GATE THRESHOLD OF 2V SUITABLE FOR POWER SWITCHING APPLICATIONS.

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Lead Time (weeks)

Expected Ship Date

10/15/26

Unit Price

$2.706825

Total Price

$2.706825

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$2.622675

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$2.5806

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$2.5245

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$2.4684

VISHAY SIHB18N60E-GE3

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